Low-Temperature Semiconductor Measurement and Analysis System

The measurement system described is suitable for electrical characterization (I-V, C-V) of semiconductor electronic materials and nanoscale devices. It includes a temperature control system for thermal modulation, allowing for the analysis of the reliability and electrical mechanisms of electronic devices. This platform can provide temperature-dependent measurements ranging from 4K to 400K under vacuum conditions (approximately below 4×10-2 torr) and supports measurements on up to five-terminal devices. It can be coupled with the Agilent B1500 Semiconductor Parameter Analyzer and Agilent B1530A for characterizing device properties at different temperatures and conducting reliability studies. This system aids in elucidating the underlying physical mechanisms, making it an indispensable tool for researching and analyzing low-temperature electrical properties of materials.

This electrical measurement system combines various technologies, including variable temperature control, low-temperature high magnetic fields, variable frequency, light exposure, and environmental atmosphere control, enabling in-depth analysis of electronic devices. Additionally, this measurement system innovatively integrates a low-temperature electrical characterization platform with a Fast IV rapid measurement and analysis system. This integration allows for the observation of current-voltage characteristics in extremely short timeframes (with resolutions in the nanosecond range) at low temperatures. By mitigating thermal effects through low-temperature techniques, it provides a more precise insight into the electrical behavior of the components.

The measurement system also includes specific electrical analysis techniques tailored for individual devices. For example, with regard to solar cells, it employs AC and DC measurements to control the depletion region and measure changes in capacitance, thereby analyzing the distribution of material and interface defects. For flexible devices, it provides electrical testing under stress conditions. In the case of memory devices, it conducts endurance and retention tests at both room temperature and high temperature to assess memory characteristics. For gas sensors, it introduces appropriate gases using a mass flow controller to detect device sensitivity and selectivity.

Services

（1）Precise Electrical Characterization Analysis

（2）Temperature Ramp Measurement

（3）Low-Temperature Electrical Characterization

（4）Low-Temperature High-Magnetic-Field Electrical Characterization

（5）Atmospheric Measurement

Specifications：

HRSMU(High Resolution SMU) × 4

Resolution：1fA/25μV to 100mA/100V

HPSMU(High Power SMU) × 1

Resolution：10fA/2μV to 1A/200V

PGU(Pulse Generator Unit) × 2

Amplitude：40Vp-p

Pulse width：500μs to 2s (100μs res.)

Pulse period：5ms to 5s (100μs res.)

Transition time：8ns to 400ms (2ns to 8ns res.)

Note：Source Monitor Unit(SMU)

MFCMU(Multi-Frequency capacitance measurement unit)

Frequency

Range：1kHz to 5MHz

Resolution：1mHz

Amplitude：100 V DC bias with SMU and SCUU (SMU CMU Unify Unit)

Output signal level：

Range：10mV to 250mV

Resolution：1mV

WGFMU(Waveform generator/fast measurement unit)

Resolution：10ns

Amplitude：100 V DC bias with SMU and

HV-SPGU(High voltage semiconductor pulse generator unit)

Resolution：10ns

Amplitude：-40V to 40V

Pulse width：10ns to period-10ns (2.5ns to 10ns res.)

Pulse period：20ns to 10s (10ns res.)

Transition time：8ns to 400ms (2ns to 8ns res.)

Charging standards

The instrument usage fee is 3,000-4,000 New Taiwan Dollars per hour, and liquid nitrogen cooling (77K) is included.。

Note: If cooling below 77K is required, an additional fee for liquid helium will apply

Sample Preparation

Sample sizes must be within 2 inches.

Samples that release gases under vacuum or at room temperature will not be accepted.

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