2020-SCI

(only counts those affiliation or acknowledgement mentioned Center for NanoScience & NanoTechnology, National Sun Yat-sen University)
Journal ranking: ☆5%, ★ 10%, ★☆ 15%, ★★ 20%, ★★☆ 25%, ★★★ 30%

1	Chen, PH (Chen, Po-Hsun); Hsieh, CY (Hsieh, Chen-Yi); Yang, HY (Yang, Hong-Yi)『Effects of Charge Quantity Induced by Different Forming Methods in Solid Electrolyte GeSO-Based Resistance Switching Device With Copper Electrode』IEEE TRANSACTIONS ON ELECTRON DEVICES 67:6-2324-2328 (JUN 2020) (SCI: 2.913)(RANK: 100/266,37.59%)
2	Wu, MJ (Wu, Mengjian); Wu, ZX (Wu, Zhaoxia); Ding, SW (Ding, Shangwu); Chen, Z (Chen, Zhong); Cui, XH (Cui, Xiaohong) 『Different submicellar solubilization mechanisms revealed by H-1 NMR and 2D diffusion ordered spectroscopy (DOSY)』PHYSICAL CHEMISTRY CHEMICAL PHYSICS 22:19-11075-11085 (MAY 21 2020) (SCI: 3.43)(RANK: 66/159,41.51%)
3	Hsieh, CM (Hsieh, Chia-Min) ; Wu, TL (Wu, Tien-Lin); Jayakumar, J (Jayakumar, Jayachandran); Wang, YC (Wang, Ying-Chun) ; Ko, CL (Ko, Chang-Lun); Hung, WY (Hung, Wen-Yi) ; Lin, TC (Lin, Tzu-Chieh) ; Wu, HH (Wu, Hsin-Hui) ; Lin, KH (Lin, Kuan-Heng); Lin, CH (Lin, Cheng-Hung) ; Hsieh, SC (Hsieh, Shuchen); Cheng, CH (Cheng, Chien-Hong) 『Diboron-Based Delayed Fluorescent Emitters with Orange-to-Red Emission and Superior Organic Light-Emitting Diode Efficiency』ACS APPLIED MATERIALS & INTERFACES 12:20-23199-23206 (MAY 20 2020) (SCI: 8.758)(RANK: 33/314,10.51%)
4	Wang, C (Wang, Cheng); Yang, Y (Yang, Yu); Cui, XH (Cui, Xiaohong); Ding, SW (Ding, Shangwu); Chen, Z (Chen, Zhong) 『Three different types of solubilization of thymol in Tween 80: Micelles, solutions, and emulsions- a mechanism study of micellar solubilization』JOURNAL OF MOLECULAR LIQUIDS 306 (MAY 15 2020) (SCI: 5.065)(RANK: 45/159,28.30%)
5	Zheng, YZ (Zheng, Yu-Zhe) ; Huang, SP (Huang, Shin-Ping); Chen, PH (Chen, Po-Hsun) ; Chang, TC (Chang, Ting-Chang); Tsai, TM(Tsai, Tsung-Ming); Chu, AK (Chu, Ann-Kuo) ; Hung, YH (Hung, Yang-Hao); Shih, YS (Shih, Yu-Shan); Wang, YX (Wang, Yu-Xuan) ; Wu, CC(Wu, Chia-Chuan); Tu, YF (Tu, Yu-Fa); Chen, YA (Chen, Yu-An); Sun, PJ (Sun, Pei-Jun); Chung, YH (Chung, Yu-Hua) ; Chen, WH (Chen, Wei-Han) ; Wang, TJ (Wang, Tai-Jui) 『Enhancement of Mechanical Bending Stress Endurance Using an Organic Trench Structure in Foldable Polycrystalline Silicon TFTs』IEEE ELECTRON DEVICE LETTERS 41:5-721-724 (MAY 2020) (SCI: 3.753)(RANK: 62/266,23.31%)
6	Hung, YH (Hung, Yang-Hao) ; Chang, TC (Chang, Ting-Chang); Chen, PH (Chen, Po-Hsun) ; Liao, PY (Liao, Po-Yung); Su, WC (Su, Wan-Ching) ; Chen, HC (Chen, Hong-Chih); Tu, YF (Tu, Yu-Fa); Zheng, YZ (Zheng, Yu-Zhe); Lu, IN (Lu, I-Nien) ; Lin, YS (Lin, Yu-Shan) ;Ciou, FM (Ciou, Fong-Min); Tsai, TM (Tsai, Tsung-Ming) 『Influence of Hot Carriers and Illumination Stress on a-InGaZnO TFTs With Asymmetrical Geometry』IEEE ELECTRON DEVICE LETTERS 41:5-745-748(MAY 2020) (SCI:3.753)(RANK: 62/266,23.31%)
7	Chen, PH (Chen, Po-Hsun); Zheng, HX (Zheng, Hao-Xuan) ; Su, YT (Su, Yu-Ting)『Incorporation of a bipolar incremental step pulse programming with thermal forming to reduce the forming voltage in 1T1R structure resistance random access memory』APPLIED PHYSICS EXPRESS 13:5(MAY 1 2020)(SCI:2.772)(RANK:46/148,31.08%)
8	Taran, S (Taran, S.); Biswas, B (Biswas, Bhaskar) ; Yang, HD (Yang, H. D.)『Structural, Magnetic, and Ferroelectric Properties of Zr-Doped Y1-xZrxCrO3 Bulk Polycrystalline System』JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM(APR 2020)(SCI:1.13)(RANK:119/148,8.04%)
9	Huang, WC (Huang, Wei-Chen); Zheng, HX (Zheng, Hao-Xuan); Chen, PH (Chen, Po-Hsun) ; Chang, TC (Chang, Ting-Chang); Tan, YF (Tan, Yung-Fang) ; Lin, SK (Lin, Shih-Kai); Zhang, YC (Zhang, Yong-Ci); Jin, FY (Jin, Fu-Yuan); Wu, CW (Wu, Chung-Wei) ; Yeh, YH (Yeh, Yu-Hsuan); Chou, SY (Chou, Sheng-Yao); Huang, HC (Huang, Hui-Chun); Chen, YW (Chen, Yan-Wen); Sze, SM (Sze, Simon M.) 『Incorporation of Resistive Random Access Memory into Low-Temperature Polysilicon Transistor with Fin-Like Structure as 1T1R Device』ADVANCED ELECTRONIC MATERIALS(APR 2020) (SCI:6.312)(RANK:47/293,16.04%)
10	Yuan, XB (Yuan, Xuebin); Zhou, H (Zhou, Hua) ; Wang, HQ (Wang, Hui-Qiong); Wang, XD (Wang, Xiao-Dan); Geng, W (Geng, Wei) ; Zhan, HH (Zhan, Huahan); Kisslinger, K (Kisslinger, Kim); Zhang, LH (Zhang, Lihua); Xu, MC (Xu, Mingchun); Chen, QY (Chen, Quark Y.); Kang, JY (Kang, Junyong) 『Interface structures of inclined ZnO thin film on (011)-MgO substrate with bulk-like optical properties』APPLIED SURFACE SCIENCE 509 (APR 15 2020)(SCI:5.155)(RANK:35/148,23.65%)
11	Chen, PH (Chen, Po-Hsun); Yang, HY (Yang, Hong-Yi); Su, YT (Su, Yu-Ting); Tsou, CM (Tsou, Chia-Min) 『Fully-transparent resistance switching memristor based on indium-tin-oxide material』JOURNAL OF MICROMECHANICS AND MICROENGINEERING 30:4 ( APR 2020) (SCI:1.793)(RANK:160/266,60.15%)
12	Lin, PY (Lin, Pei-Ying); He, G (He, Gongchun); Chen, J (Chen, Jyunde) ; Dwivedi, AK(Dwivedi, Atul Kumar); Hsieh, S (Hsieh, Shuchen) 『Monitoring the photoinduced surface catalytic coupling reaction and environmental exhaust fumes with an Ag/PDA/CuO modified 3D glass microfiber platform』JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY 82:424-432 ( FEB 25 2020) (SCI:4.978)(RANK:38/172,22.09%)
13	Lin, CY (Lin, Chih-Yang); Tseng, YT (Tseng, Yi-Ting); Chen, PH (Chen, Po-Hsun); Chang, TC (Chang, Ting-Chang); Eshraghian, JK (Eshraghian, Jason K.); Wang, Q (Wang, Qiwen); Lin, Q (Lin, Qi); Tan, YF (Tan, Yung-Fang) ; Tai, MC (Tai, Mao-Chou); Hung, WC (Hung, Wei-Chun); Huang, HC (Huang, Hui-Chun) ; Lu, WD (Lu, Wei D.) ; Sze, SM (Sze, Simon M.) 『A high-speed MIM resistive memory cell with an inherent vanadium selector』 APPLIED MATERIALS TODAY 21 (DEC 2020) (SCI: 8.352)(RANK:34/314, 10.83%)
14	Chen, KH (Chen, Kuan-Hsu) ; Lin, CY (Lin, Chien-Yu); Chen, MC (Chen, Min-Chen); Lin, YS (Lin, Yu-Shan); Chang, YC (Chang, Yen-Cheng); Lin, YH (Lin, Yun-Hsuan); Jin, FY (Jin, Fu-Yuan); Ciou, FM (Ciou, Fong-Min); Chang, KC (Chang, Kai-Chun); Hung, WC (Hung, Wei-Chun); Kuo, TT (Kuo, Ting-Tzu); Yeh, CH (Yeh, Chien-Hung) ; Chen, PH (Chen, Po-Hsun); Chang, TC (Chang, Ting-Chang) 『Advanced Low-Temperature-High-Pressure Hydrogen Treatment for Interface Defect Passivation in Si- and SiGe-Channel MOSCAPs』 IEEE TRANSACTIONS ON ELECTRON DEVICES 67:12- 5403-5407 (DEC 2020) (SCI: 2.913)(RANK:100/266, 37.59%)
15	Kailasa, SK (Kailasa, Suresh Kumar) ; Koduru, JR (Koduru, Janardhan Reddy); Park, TJ (Park, Tae Jung); Wu, HF (Wu, Hui-Fen); Lin, YC (Lin, Ying-Chi) 『Progress of electrospray ionization and rapid evaporative ionization mass spectrometric techniques for the broad-range identification of microorganisms (vol 144, pg 1073, 2019)』APPLIED PHYSICS EXPRESS 145:21- 7072-7072 (NOV 7 2020) (SCI: 3.978)(RANK:15/86,17.44%)
16	Yeh, TH (Yeh, Tsung-Han); Chen, PH (Chen, Po-Hsun) ; Lin, CY (Lin, Chih-Yang) ; Tseng, YT (Tseng, Yi-Ting); Chen, WC (Chen, Wen-Chung); Lin, CC (Lin, Chun-Chu); Chang, TC (Chang, Ting-Chang); Lee, CT (Lee, Ching-Ting); Lee, HY (Lee, Hsin-Ying) 『Enhancing Threshold Switching Characteristics and Stability of Vanadium Oxide-Based Selector With Vanadium Electrode』 IEEE TRANSACTIONS ON ELECTRON DEVICES 67:11-5059-5062 (NOV 2020) (SCI: 2.913)(RANK:100/266,37.59%)
17	Sun, LC (Sun, Li-Chuan) ; Lin, CY (Lin, Chih-Yang); Chen, PH (Chen, Po-Hsun); Tsai, TM (Tsai, Tsung-Ming) ; Zhou, KJ (Zhou, Kuan-Ju) ; Tu, YF (Tu, Yu-Fa); Huang, WC (Huang, Wei-Chen); Tseng, YT (Tseng, Yi-Ting); Tan, YF (Tan, Yung-Fang); Lin, SK (Lin, Shih-Kai); Lin, CC (Lin, Chun-Chu); Hung, WC (Hung, Wei-Chun) ; Chang, YC (Chang, Yen-Cheng); Chang, TC (Chang, Ting-Chang) 『Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature』APPLIED PHYSICS EXPRESS 13-11 (NOV 1 2020) (SCI: 3.086)(RANK:45/155,29.03%)
18	Chen, WC (Chen, Wen-Chung); Zhang, YC (Zhang, Yong-Ci); Chen, PH (Chen, Po-Hsun) ; Tseng, YT (Tseng, Yi-Ting); Wu, CH (Wu, Cheng-Hsien) ; Yang, CC (Yang, Chih-Cheng); Wu, PY (Wu, Pei-Yu); Tan, YF (Tan, Yung-Fang); Lin, SK (Lin, Shih-Kai); Huang, WC (Huang, Wei-Chen); Huang, HC (Huang, Hui-Chun); Tsai, TM (Tsai, Tsung-Ming); Chang, TC (Chang, Ting-Chang) 『Investigation on the current conduction mechanism of HfZrO(x)ferroelectric memory』JOURNAL OF PHYSICS D-APPLIED PHYSICS 53-44 (OCT 28 2020) (SCI: 3.169)(RANK:44/154,28.57%)
19	Yang, HY (Yang, Hong-Yi); Lo, I (Lo, Ikai); Tsai, CD (Tsai, Cheng-Da); Wang, YC (Wang, Ying-Chieh); Shih, HJ (Shih, Huei-Jyun); Huang, HC (Huang, Hui-Chun); Chou, MMC (Chou, Mitch M. C.); Huang, L (Huang, Louie); Wang, TC (Wang, Terence); Kuo, CTC (Kuo, Ching T. C.) 『Anisotropic Strain on GaN Microdisks Grown by Plasma-Assisted Molecular Beam Epitaxy』CRYSTALS 10-10 (OCT 2020) (SCI: 2.404)(RANK:10/26,38.46%)
20	Lin, CY (Lin, Chih-Yang); Chen, J (Chen, Jia); Chen, PH (Chen, Po-Hsun); Chang, TC (Chang, Ting-Chang) ; Wu, YT (Wu, Yuting); Eshraghian, JK (Eshraghian, Jason K.); Moon, J (Moon, John); Yoo, S (Yoo, Sangmin); Wang, YH (Wang, Yu-Hsun) ; Chen, WC (Chen, Wen-Chung)[; Wang, ZY (Wang, Zhi-Yang) ; Huang, HC (Huang, Hui-Chun) ; Li, Y (Li, Yi); Miao, XS (Miao, Xiangshui) ; Lu, WD (Lu, Wei D.); Sze, SM (Sze, Simon M.) 『Adaptive Synaptic Memory via Lithium Ion Modulation in RRAM Devices』SMALL 16-42 (OCT 22 2020) (SCI: 11.459)(RANK:15/159,9.43%)
21	Lin, PY (Lin, Pei-Ying); Wu, HM (Wu, Hao-Ming); Hsieh, SL (Hsieh, Shu-Ling) ; Li, JS (Li, Jun-Sian); Dong, CD (Dong, Chengdi) ; Chen, CW (Chen, Chiu-Wen); Hsieh, SC (Hsieh, Shuchen) 『Preparation of vaterite calcium carbonate granules from discarded oyster shells as an adsorbent for heavy metal ions removal』CHEMOSPHERE 254 (SEP 2020) (SCI: 5.778)(RANK: 29/265,10.94%)
22	Chen, L (Chen, Linjer) ; Hsieh, SL (Hsieh, Shu-Ling); Kuo, CH (Kuo, Chia-Hung) ; Hsieh, SC (Hsieh, Shuchen) ; Chen, WH (Chen, Wei-Hsiang); Chen, CW (Chen, Chiu-Wen); Dong, CD (Dong, Cheng-Di) 『Novel MoS(2)quantum dots as a highly efficient visible-light driven photocatalyst in water remediation』RSC ADVANCES 10:53- 31794-31799 (AUG 31 2020) (SCI: 3.119)(RANK: 73/177,41.24%)
23	Chang, TC (Chang, T-C); Chen, PH (Chen, P-H); Lin, CY (Lin, C-Y); Shih, CC (Shih, C-C) 『Low temperature defect passivation technology for semiconductor electronic devices-supercritical fluids treatment process』MATERIALS TODAY PHYSICS 14 (AUG 2020) (SCI: 10.443)(RANK:26/314,8.28%)
24	Huang, SP (Huang, Shin-Ping); Chen, HC (Chen, Hong-Chih); Chen, PH (Chen, Po-Hsun); Zheng, YZ (Zheng, Yu-Zhe); Chu, AK (Chu, Ann-Kuo); Shih, YS (Shih, Yu-Shan); Wang, YX (Wang, Yu-Xuan); Wu, CC (Wu, Chia-Chuan); Chen, YA (Chen, Yu-An); Sun, PJ (Sun, Pei-Jun); Huang, HC (Huang, Hui-Chun); Lai, WC (Lai, Wei-Chih); Chang, TC (Chang, Ting-Chang) 『Effect of ELA Energy Density on Self-Heating Stress in Low-Temperature Polycrystalline Silicon Thin-Film Transistors』IEEE TRANSACTIONS ON ELECTRON DEVICES 68:7-3163-3166 (AUG 2020) (SCI: 2.913)(RANK: 100/266,37.59%)
25	Lin, YH (Lin, Yun-Hsuan) ; Chen, WC (Chen, Wen-Chung); Chen, PH (Chen, Po-Hsun); Lin, CY (Lin, Chih-Yang); Chang, KC (Chang, Kai-Chun); Chang, YC (Chang, Yen-Cheng); Yeh, CH (Yeh, Chien-Hung) ; Lin, CY (Lin, Chein-Yu); Jin, FY (Jin, Fu-Yuan); Chen, KH (Chen, Kuan-Hsu); Kuo, TT (Kuo, Ting-Tzu); Hung, WC (Hung, Wei-Chieh); Lee, YH (Lee, Ya-Huan) ; Lin, JH (Lin, Jia-Hong); Chang, TC (Chang, Ting-Chang) 『Effect of deposition temperature on electrical properties of one-transistor-one-capacitor (1T1C) FeRAM devices』APPLIED PHYSICS LETTERS 117-2 (JUL 13 2020) (SCI: 3.597)(RANK: 37/154,24.03%)
26	Lin, CY (Lin, C. -Y.) ; Chen, PH (Chen, P. -H.); Chang, TC (Chang, T. -C.) ; Huang, WC (Huang, W. -C.) ; Tan, YF (Tan, Y. -F.); Lin, YH (Lin, Y. -H.) ; Chen, WC (Chen, W. -C.) ; Lin, CC (Lin, C. -C.); Chang, YF (Chang, Y. -F.) ; Chen, YC (Chen, Y. -C.); Huang, HC (Huang, H. -C.); Ma, XH (Ma, X. -H.); Hao, Y (Hao, Y.); Sze, SM (Sze, S. M.) 『A comprehensive study of enhanced characteristics with localized transition in interface-type vanadium-based devices』MATERIALS TODAY PHYSICS 13 (JUN 2020) (SCI: 10.443)(RANK: 26/314,8.28%)
27	Chang, TC (Chang, T-C) ; Tsao, YC (Tsao, Y-C); Chen, PH (Chen, P-H) ; Tai, MC (Tai, M-C); Huang, SP (Huang, S-P) ; Su, WC (Su, W-C); Chen, GF(Chen, G-F) 『Flexible low-temperature polycrystalline silicon thin-film transistors』MATERIALS TODAY ADVANCES 5 ( MAR 2020) (SCI:)(RANK:)

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