2025-SCI
2025-SCI
(only counts those affiliation or acknowledgement mentioned Center for NanoScience & NanoTechnology, National Sun Yat-sen University)
Journal ranking: ☆5%, ★ 10%, ★☆ 15%, ★★ 20%, ★★☆ 25%, ★★★ 30%
| 1 | Lee, Ya-Huan; Chen, Po-Hsun; Yeh, Yu-Hsuan; Hsu, Jui-Tse; Hung, Wei-Chieh; Lin, Jia-Hong; Kuo, Hung-Ming; Chang, Han-Yu; Lin, Cheng-Hsien; Tsai, Yu-Jie; Chang, Ting-Chang 『Analysis of the Formation of the Off-State Leakage Current in p-GaN HEMT』 IEEE TRANSACTIONS ON ELECTRON DEVICES 72(2), 625-628 (FEB 2025) (SCI: 3.6) (RANK: 72/191, 37.7%) |
| 2 | Lin, Cheng-Hsien; Yeh, Chien-Hung; Chen, Po-Hsun; Chang, Ting-Chang; Lee, Ya-Huan; Wang, Yu-Bo; Kuo, Ting-Tzu; Kuo, Hung-Ming; Hsu, Jui-Tse; Lin, Jia-Hong; Chen, Bo-Yu; Kuo, Yu-Hsuan; Tsai, Yu-Jie 『Analysis of Insulator Breakdown Induced by Body-Grounded-Coupling Effect in GaN-Based MIS-HEMT』 IEEE TRANSACTIONS ON ELECTRON DEVICES 72(3), 1014-1020 (MAR 2025) (SCI: 3.6) (RANK: 72/191, 37.7%) |
| 3 | Madhu, Manivannan; Varatharajan, Aravindan; Santhoshkumar, S.; Tseng, Wei-Bin; Lin, Po-Chiao; Tseng, Wei-Lung 『Aggregation-induced emission and absorption enhancement of mixed-valent rhenium oxide quantum dots by triethylamine: Implications for food safety monitoring』 JOURNAL OF HAZARDOUS MATERIALS 486 (MAR 15 2025) (SCI: 10.6) (RANK: 28/395, 7.09%) |
| 4 | Chen, Po-Hsun; Yeh, Tsung-Han; Tan, Yung-Fang 『Investigation and modeling mechanism on capacitance characteristic with electrical measurement to ferroelectric random access memory』 PHYSICA SCRIPTA 100(4) (APR 1 2025) (SCI: 2.6) (RANK: 41/112, 36.6%) |
| 5 | Chen, Po-Hsun; Zhou, Kuan-Ju; Lin, Cheng-Hsien 『Ultraviolet Induced Effects on Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors With Relatively Short Channel Lengths』 IEEE ELECTRON DEVICE LETTERS 46(5), 777-780 (MAY 2025) (SCI: 4.6) (RANK: 108/369, 29.27%) |
| 6 | Chen, Po-Hsun; Yeh, Tsung-Han; Lin, Cheng-Hsien; Chang, Kai-Chun 『Investigating the Saturation Phenomenon of the Drain-Induced Barrier Lowering Effect on AlGaN/GaN High Electron Mobility Transistors with Schottky-Gate Structures』 ACS APPLIED ELECTRONIC MATERIALS 7(10), 4609-4615 (MAY 5 2025) (SCI: 4.7) (RANK: 104/369, 28.18%) |
| 7 | Wu, Chung-Wei; Chen, Po-Hsun; Chen, Ming-Chen; Yeh, Yu-Hsuan; Zhang, Yong-Ci; Kuo, Ting-Tzu; Chou, Sheng-Yao; Hsu, Jui-Tse; Lin, Jia-Hong; Lee, Ya-Huan; Weng, Quan-Hong; Chang, Ting-Chang 『Investigation of Off-State Stress-Induced Nonuniform Trapping Phenomenon in p-Type GaN High Electron Mobility Transistors (HEMTs)』 IEEE TRANSACTIONS ON ELECTRON DEVICES 72(8), 3994-3998 (AUG 2025) (SCI: 3.6) (RANK: 72/191, 37.7%) |
| 8 | Chen, Po-Hsun; Tu, Hong-Yi; Chen, Jian-Jie 『Investigating Gate Design Structures for Low-Temperature Poly-Silicon Thin-Film Transistor on Glass and Polyimide Substrates』 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 222(15) (AUG 2025) (SCI: 2) (RANK: 54/81, 66.67%) |
| 9 | Varatharajan, Aravindan; Madhu, Manivannan; Xu, Jia-Rong; Chou, Yin-Yu; Tseng, Wei-Bin; Lu, Chi-Yu; Tseng, Wei-Lung 『Visual determination of heparin in serum utilizing surfen-induced aggregation emission enhancement of gold nanoclusters and heparin-induced fluorescence enhancement of surfen』 SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY 339 (OCT 15 2025) (SCI: 4.8) (RANK: 6/43, 13.95%) |
| 10 | Lin, Cheng-Hsien; Yeh, Chien-Hung; Chen, Po-Hsun; Chang, Ting-Chang; Lee, Ya-Huan; Kuo, Ting-Tzu; Hsu, Jui-Tse; Lin, Jia-Hong; Chen, Yi-Huang; Kuo, Yu-Hsuan; Tsai, Yu-Jie 『Impact of Nitrogen Annealing Concentration on p-Type FinFET Reliability Caused by Edge Effect』 IEEE TRANSACTIONS ON ELECTRON DEVICES 72(11), 5823-5829 (NOV 2025) (SCI: 3.6) (RANK: 72/191, 37.7%) |
| 11 |
Kuo, Chun-Hsin; Liu, Bo-Yu; Feng, Shin-Yi; Chiang, Cheng-Kang; Hsieh, Ming-Mu; Tseng, Wei-Lung |
| 12 | Zhang, Yong-Ci; Chang, Kai-Chun; Chen, Po-Hsun; Chang, Ting-Chang; Kuo, Ting-Tzu; Yeh, Chien-Hung; Lin, Jia-Hong; Lee, Ya-Huan; Kuo, Hung-Ming 『A Method to Detect Buffer Traps by the Hysteresis Window of p-GaN HEMTs』 IEEE TRANSACTIONS ON ELECTRON DEVICES 72(12), 7186-7189 (DEC 2025) (SCI: 3.6) (RANK: 72/191, 37.7%) |
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