2023-SCI
2023-SCI
(only counts those affiliation or acknowledgement mentioned Center for NanoScience & NanoTechnology, National Sun Yat-sen University)
Journal ranking: ☆5%, ★ 10%, ★☆ 15%, ★★ 20%, ★★☆ 25%, ★★★ 30%
| 1 | Chen, Po-Hsun; Su, Yu-Ting; Huang, Wei-Chen; Wu, Chung-Wei 『Improving High Resistance State in One-Transistor-One-Resistor (1T1R) Structure Resistance Random Access Memory With a Body-Biased Method』 IEEE TRANSACTIONS ON ELECTRON DEVICES 70(3), 1014-1018 (MAR 2023) (SCI: 3.2) (RANK: 142/366, 38.80%) |
| 2 | Chen, Po-Hsun; Chen, Hong-Chih; Kuo, Chuan-Wei; Chen, Jian-Jie; Huang, Hui-Chun 『Function of a Dual-Active-Layer Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistor with Ultraviolet-Induced Effects』 ACS APPLIED ELECTRONIC MATERIALS 5(4), 2065-2072 (APR 25 2023) (SCI: 4.7) (RANK: 93/366, 25.41%) |
| 3 | Wang, Ying-Chieh; Lo, Ikai; Lin, Yu-Chung; Tsai, Cheng-Da; Chang, Ting-Chang 『Improvement of Mg-Doped GaN with Shutter-Controlled Process in Plasma-Assisted Molecular Beam Epitaxy』 CRYSTALS 13(6) (JUN 2023) (SCI: 2.4) (RANK: 11/31, 35.48%) |
| 4 | Yeh, Chien-Hung; Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kai-Chun; Wang, Yu-Xuan; Kuo, Ting-Tzu; Zhang, Yong-Ci; Lin, Jia-Hong; Lee, Ya-Huan; Kuo, Hung-Ming; Yen, Wei-Ting; Tsai, I-Ting; Sze, Simon M. 『Abnormal on Current Tendency in Saturation Region Between High and Light Carbon Doped Buffer Layer in p-GaN HEMT』 IEEE ELECTRON DEVICE LETTERS 44(7), 1164-1167 (JUL 2023) (SCI: 4.5) (RANK: 98/366, 26.78%) |
| 5 | Lin, Yu-Chung; Lo, Ikai; Tsai, Cheng-Da; Wang, Ying-Chieh; Huang, Hui-Chun; Li, Chu-An; Chou, Mitch M. C.; Chang, Ting-Chang 『Optimization of Ternary InxGa1-xN Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs』NANOMATERIALS 13(13) (JUL 2023) (SCI: 4.3) (RANK: 81/239, 33.89%) |
| 6 | Huang, Yi-Shen; Ejeta, Dula Daksa; Lin, Kun-Yi (Andrew); Kuo, Shiao-Wei; Jamnongkan, Tongsai; Huang, Chih-Feng 『Synthesis of PDMS-μ-PCL Miktoarm Star Copolymers by Combinations (ε) of Styrenics-Assisted Atom Transfer Radical Coupling and Ring-Opening Polymerization and Study of the Self-Assembled Nanostructures』 NANOMATERIALS 13(16) (AUG 2023) (SCI: 4.3) (RANK: 81/239, 33.89%) |
| 7 | Huang, Jen-Wei; Chen, Po-Hsun; Yeh, Tsung-Han; Yang, Chih-Cheng 『Investigating the Effects of Sulfur Treatment on Material Characteristics and Resistance Switching Device Applications with Supercritical Fluid Technique』 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 220(19) (OCT 2023) (SCI: 1.9) (RANK: 336/460, 73.04%) |
| 8 | Chen, Po-Hsun; Zheng, Yu-Zhe; Yeh, Tsung-Han; Nieh, Tzu-Yun 『Investigating DC and AC degradation behaviors to P-type low temperature polycrystalline silicon thin film transistor with fin-like structure』 JOURNAL OF PHYSICS D-APPLIED PHYSICS 56(43) (OCT 26 2023) (SCI: 3.2) (RANK: 71/187, 37.97%) |
| 9 | Huang, Yi-Shen; Ejeta, Dula Daksa; Kuo, Shiao-Wei; Nakamura, Yasuyuki; Huang, Chih-Feng 『Combinations (∈) among controlled/living polymerizations and utilizations of efficient chemical reactions for the synthesis of novel polymeric materials』 POLYMER CHEMISTRY 14(42), 4783-4803 (OCT 31 2023) (SCI: 3.9) (RANK: 34/94, 36.17%) |
| 10 | Hsieh, Shuchen; Lin, Pei-Ying; Lin, I-Hui; Beck, David E.; Lin, Ching-Hui 『Assessing the contribution of semiconductors to the sustainable development goals (SDGs) from 2017 to 2022』 HELIYON 9(11) (NOV 2023) (SCI: 3.6) (RANK: 29/135, 21.48%) |
| 11 | Lin, Yu-Ching; Lin, Pei-Ying; Beck, David E.; Hsu, Yu-Chieh; Cheng, Sheng-Han; Hsieh, Shuchen 『Fluorescence quenching detection of p-nitrophenol in river water using functional perovskite quantum dots』 ENVIRONMENTAL TECHNOLOGY & INNOVATION 32 (NOV 2023) (SCI: 7.1) (RANK: 16/177, 9.04%) |
| 12 | Lin, Chin-Chung; Lin, Pei-Ying; Han, Zhenyuan; Tsai, Chen-Yu; Beck, David E.; Hsieh, Shuchen 『Rapid identification and detection of aristolochic acids in the herbal extracts by Raman spectroscopy』 SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY 300 (NOV 5 2023) (SCI: 4.6) (RANK: 5/44, 11.36%) |
| 13 | Huang, Jen-Wei; Chen, Po-Hsun; Yeh, Tsung-Han; Tsai, Xin-Ying; Wu, Pei-Yu 『Analysis of the Extraction Method and Mechanism of Hot Carrier Degradation in Al2O3/Si3N4 Bilayer Gate Dielectric AlGaN/GaN MIS-HEMTs』 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 23(4), 510-515 (DEC 2023) (SCI: 2.3) (RANK: 197/366, 53.83%) |
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