2021-SCI

(only counts those affiliation or acknowledgement mentioned Center for NanoScience & NanoTechnology, National Sun Yat-sen University)
Journal ranking: ☆5%, ★ 10%, ★☆ 15%, ★★ 20%, ★★☆ 25%, ★★★ 30%

1	FWu, PY (Wu, Pei-Yu) ; Chang, TC (Chang, Ting-Chang) ; Chen, MC (Chen, Min-Chen) ; Yang, CC (Yang, Chih-Cheng); Zheng, HX (Zheng, Hao-Xuan) ; Chen, PH (Chen, Po-Hsun) ; Chen, WC (Chen, Wen-Chung) ; Zhang, YC (Zhang, Yong-Ci) ; Lin, SK (Lin, Shih-Kai) ; Chen, JJ (Chen, Jian-Jie) ; Huang, HC (Huang, Hui-Chun); Tsai, TM (Tsai, Tsung-Ming) ; Sze, SM (Sze, Simon M.) 『Improvement of Hafnium Oxide Resistive Memory Performance Through Low-Temperature Supercritical Oxidation Treatments』 IEEE TRANSACTIONS ON ELECTRON DEVICES 68:2- 541-544 (FEB 2021) (SCI: 2.913)(RANK:112/273, 41.03%)
2	Chen, PH (Chen, Po-Hsun); Lin, CY (Lin, Chih-Yang) ; Chang, JS (Chang, Jing-Shuen) ; Tseng, YT (Tseng, Yi-Ting) ; Huang, JW (Huang, Jen-Wei) 『Enhanced switching performance of resistance random access memories by an inserted copper tellurium layer』 JOURNAL OF PHYSICS D-APPLIED PHYSICS 54:16 ( APR 22 2021) (SCI: 3.207)(RANK:58/160, 36.25%)
3	Cheng, RH (Cheng, Ren-Hao) ; Cai, HH (Cai, Honghao) ; Huang, YR (Huang, Yu-Ren); Cui, XH (Cui, Xiaohong) ; Chen, Z (Chen, Zhong) ; Chen, HY (Chen, Hsuan-Ying) ; Ding, SW (Ding, Shangwu) 『A broad-range variable-temperature solid state NMR spectral and relaxation investigation of the water state in Nafion 117』 PHYSICAL CHEMISTRY CHEMICAL PHYSICS (MAY 14 2021) (SCI: 3.676) (RANK:77/162, 47.53%)
4	Chang, KC (Chang, Kai-Chun); Chen, PH (Chen, Po-Hsun) ; Chang, TC (Chang, Ting-Chang) ; Yeh, CH (Yeh, Chien-Hung) ; Lin, YH (Lin, Yun-Hsuan) ; Chang, YC (Chang, Yen-Cheng) ; Chen, WC (Chen, Wen-Chung) ; Tan, YF (Tan, Yung-Fang) ; Wu, CW (Wu, Chung-Wei) ; Sze, S (Sze, Simon) 『Analysis of increase in forward transconductance to determine the critical point of polarization at ferroelectric 1T1C memory』 APPLIED PHYSICS LETTERS 23:18 (MAY 17 2021) (SCI: 3.791) (RANK:47/160, 29.38%)
5	Zheng, YZ (Zheng, Yu-Zhe; Wu, CC (Wu, Chia-Chuan) ; Chen, PH (Chen, Po-Hsun) ; Chang, TC (Chang, Ting-Chang) ; Zhou, KJ (Zhou, Kuan-Ju) ; Tu, HY (Tu, Hong-Yi) ; Tu, YF (Tu, Yu-Fa); Chen, YA (Chen, Yu-An); Shih, YS (Shih, Yu-Shan) ; Wang, YX (Wang, Yu-Xuan) ; Sun, PJ (Sun, Pei-Jun) ; Hung, YH (Hung, Yang-Hao) ; Tsai, TM (Tsai, Tsung-Ming) 『Impact of AC Stress in Low Temperature Polycrystalline Silicon Thin Film Transistors Produced With Different Excimer Laser Annealing Energies』 IEEE ELECTRON DEVICE LETTERS 42:6-847-850 (JUN 2021) (SCI: 4.187) (RANK: 56/273, 20.51%)
6	Guo, RH (Guo, Rong-Hao) ; Chou, CM (Chou, Che-Min) ; Wang, CC (Wang, Chun-Chieh) ; Deng, MJ (Deng, Ming-Jay) ; Lin, JM (Lin, Jhih-Min); Chen, CY (Chen, Chun-Yu); Lee, YC (Lee, Yao-Chang) ; Chiang, YW (Chiang, Yeo-Wan); Chuang, WT (Chuang, Wei-Tsung) 『Biomimetic strategies for 4.0 V all-solid-state flexible supercapacitor: Moving toward eco-friendly, safe, aesthetic, and high-performance devices』 CHEMICAL ENGINEERING JOURNAL 414 (JUN 15 2021) (SCI: 13.273) (RANK: 4/143, 2.8%)
7	Liu, L (Liu, Ling) ; Li, YT (Li, Yuntong) ; Lu, ZW (Lu, Zhenwu) ; Chen, T (Chen, Ting) ; Cai, QP (Cai, Qipeng); Xu, YT (Xu, Yiting) ; Zeng, BR (Zeng, Birong) ; Yuan, CH (Yuan, Conghui) ; Kuo, SW (Kuo, Shiao-Wei) ; Dai, LZ (Dai, Lizong) 『Kinetics control over the Schiff base formation reaction for fabrication of hierarchical porous carbon materials with tunable morphology for high-performance supercapacitors』 NANOTECHNOLOGY 32:30 (JUL 23 2021) (SCI: 3.874) (RANK: 139/335, 41.49%)
8	Lin, CM (Lin, Che-Min) ; Chang, CF (Chang, Chun-Fu); Hsieh, WC (Hsieh, Wan-Chen) ; Chang, CW (Chang, Ching-Wen); Zheng, YY (Zheng, Yu-yuan) ; Yeh, SW (Yeh, Sung-Wei) ; Su, CJ (Su, Chun-Jung) ; Lin, YC (Lin, Yu-Chiao) ; Yu, YH (Yu, Yu-Hsuan); Chen, CW (Chen, Chien-Wei); Kei, CC (Kei, Chi-Chung); Liao, CH (Liao, Chih-Hsiung); Huang, KS (Huang, Kung-Shiuh) ; Huang, KT (Huang, Kuan-Tsae) ; Chen, D (Chen, Di) ; Chu, WK (Chu, Wei-Kan) ; Tu, LW (Tu, Li-Wei) ; Wadekar, PV (Wadekar, Paritosh V.) ; Leung, TC (Leung, Tsan-Chuen) ; Seo, HW (Seo, Hye-Won) ; Liaw, BY (Liaw, Bor-Yann) ; Chen, QY (Chen, Quark Yungsung) 『Electrically tunable bandgaps for g-ZnO/ZnX (X = S, Se, Te) 2D semiconductor bilayers』 VACUUM 192 (OCT 2021) (SCI: 3.627) (RANK: 151/335, 45.07%)
9	Ciou, FM (Ciou, Fong-Min) ; Lin, JH (Lin, Jia-Hong) ; Chen, PH (Chen, Po-Hsun) ; Chang, TC (Chang, Ting-Chang) ; Chang, KC (Chang, Kai-Chun) ; Hsu, JT (Hsu, Jui-Tse); Lin, YS (Lin, Yu-Shan) ; Jin, FY (Jin, Fu-Yuan) ; Hung, WC (Hung, Wei-Chun) ; Yeh, CH (Yeh, Chien-Hung); Kuo, TT (Kuo, Ting-Tzu) ; Cheng, O (Cheng, Osbert) ; Huang, CT (Huang, Cheng-Tung) ; Ye, YH (Ye, Yi-Han) 『Comparison of the Hot Carrier Degradation of N- and P-Type Fin Field-Effect Transistors in 14-nm Technology Nodes』 IEEE ELECTRON DEVICE LETTERS 42:10 (OCT 2021) (SCI: 4.187) (RANK: 56/273, 20.51%)
10	Huang, WC (Huang, Wei-Chen) ; Chen, PH (Chen, Po-Hsun) ; Lin, CY (Lin, Chih-Yang) ; Zheng, HX (Zheng, Hao-Xuan) ; Chen, HC (Chen, Hong-Chih) ; Ciou, FM (Ciou, Fong-Min) ; Tan, YF (Tan, Yung-Fang) ; Chang, KC (Chang, Kai-Chun) ; Lin, YH (Lin, Yun-Hsuan) ; Chang, YC (Chang, Yen-Cheng) ; Lin, SK (Lin, Shih-Kai) ; Hung, WC (Hung, Wei-Chun) ; Thio, W (Thio, Wesley) ; Chang, TC (Chang, Ting-Chang) 『Abnormal hump in low temperature in SiGe devices with silicon capping insertion layer』 JOURNAL OF PHYSICS D-APPLIED PHYSICS 54:41 (OCT 14 2021) (SCI: 3.207) (RANK: 58/160, 36.25%)
11	Hsieh, SL (Hsieh, Shu-Ling) ; Li, FY (Li, Fang-Yu) ; Lin, PY (Lin, Pei-Ying) ; Beck, DE (Beck, David E.) ; Kirankumar, R (Kirankumar, Rajendranath) ; Wang, GJ (Wang, Gan-Jie) ; Hsieh, SC (Hsieh, Shuchen) 『CaO recovered from eggshell waste as a potential adsorbent for greenhouse gas CO2』 JOURNAL OF ENVIRONMENTAL MANAGEMENT 297 (NOV 1 2021) (SCI: 6.789) (RANK: 34/274, 12.41%)
12	Chen, JJ (Chen, Jian-Jie); Chen, PH (Chen, Po-Hsun) ; Chang, TC (Chang, Ting-Chang) ; Tu, YF (Tu, Yu-Fa) ; Zhou, KJ (Zhou, Kuan-Ju); Kuo, CW (Kuo, Chuan-Wei) ; Hung, WC (Hung, Wei-Chun) ; Wu, PY (Wu, Pei-Yu) ; Huang, HC (Huang, Hui-Chun) 『Highly-Doped Region Optimization for Reduced Hot-Carrier Effects in Dual-Gate Low Temperature Polysilicon TFTs』 IEEE ELECTRON DEVICE LETTERS 42:12 (DEC 2021) (SCI: 4.187) (RANK: 56/273, 20.51%)
13	Huang, PJ (Huang, Po-Jui) ; Kumarasamy, K (Kumarasamy, Keerthika) ; Devendhiran, T (Devendhiran, Tamiloli) ; Chen, YC (Chen, Yen-Chun) ; Dong, TY (Dong, Teng-Yuan) ; Lin, MC (Lin, Mei-Ching) 『BODIPY-based hydroxypyridyl derivative as a highly Ni2+-selective fluorescent chemosensor』 JOURNAL OF MOLECULAR STRUCTURE 1246 (DEC 15 2021) (SCI: 3.196) (RANK: 83/162, 51.23%)
14	Shih, HJ (Shih, Huei-Jyun) ;Lo, I (Lo, Ikai) ;Wang, YC (Wang, Ying-Chieh) ;Tsai, CD (Tsai, Cheng-Da) ;Yang, HY (Yang, Hong-Yi) ;Lin, YC (Lin, Yu-Chung) ;Huang, HC (Huang, Hui-Chun) 『Influence of lattice misfit on crack formation during the epitaxy of InyAl1-yN on GaN』 JOURNAL OF ALLOYS AND COMPOUNDS 890 (JAN 15 2022) (SCI: 5.316) (RANK: 53/162, 32.72%)
15	Chen, L (Chen, Linjer) ;Ponnusamy, VK (Ponnusamy, Vinoth Kumar) ;Hsieh, SL (Hsieh, Shu-Ling) ;Hsieh, S (Hsieh, Shuchen) ;Chen, CW (Chen, Chiu-Wen) ;Dong, CD (Dong, Cheng-Di) 『Rapid efficient degradation pathway of tetracycline and Pb (II) reduction mechanism by a novel nanocomposite heterojunction photocatalysts』 JOURNAL OF ALLOYS AND COMPOUNDS 892 (FEB 5 2022) (SCI: 5.316) (RANK: 53/162, 32.72%)
16	Lin, PY (Lin, Pei-Ying); Kirankumar, R (Kirankumar, Rajendranath); Beck, DE (Beck, David E.); Hsieh, S (Hsieh, Shuchen) 『Self-assembly of broadband-emitting SnOx nanodots for efficient Cr (VI) detection』 SENSORS AND ACTUATORS B-CHEMICAL 355 (MAR 15 2022) (SCI: 7.46) (RANK: 7/87, 8.05%)

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